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 Epi Wafers
SEH is a world leader in epitaxial silicon technology. Our tool set, recipe
development and process control systems are capable of delivering a very high
quality epi wafer for your applications.
Epi wafers for CMOS applications are available in diameters up to 300mm and
for Discrete/Power applications up to 200mm diameter.
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Dopant |
Resistivity Target (ohm-cm) |
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Boron |
0.005 to 0.010 ohm-cm
0.01 to 0.02
> 0.5 |
P++
P+
P- |
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Antimony |
> 0.02 |
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Phosphorus |
> 0.01 |
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Red Phos |
< 0.0015 |
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Arsenic |
< 0.0030 |
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Please inquire about lower resistivity targets not listed |
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Thickness |
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> 1 µm |
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Resistivity |
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Boron doped |
0.2 ohm-cm to 50 ohm-cm |
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Phosphorus |
0.2 ohm-cm to 50 ohm-cm |
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Intrinsic |
< 1E15/cm3 within 2 µm of substrate |
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