|
 |
|
 Low Resistivity Substrate
These highly doped, low resistivity wafers have been manufacutured as Epi substrates. They may be appropriate as Epi substrates or as dial-in and process control wafers for epitaxial facilities. In some cases, highly doped wafers may be required for specific fab monitoring applications.
| |
| |
Dia |
|
5 |
6 |
8 |
12 |
| |
Product Code |
|
5PP0P |
6PP0P |
8PP0P |
12PP0P |
| |
Type |
|
p-boron |
p-boron |
p-boron |
p-boron |
| |
Orient |
|
<100> |
<100> |
<100> |
<100> |
| |
Res |
|
0.02 - 0.005 |
0.02 - 0.005 |
0.02 - 0.005 |
0.02 - 0.005 |
| |
Surface Metals |
|
<= 5 E10 |
<= 5 E10 |
<= 5 E10 |
<= 5 E10 |
| |
Global Flatness |
TTV |
<5.0 |
<5.0 |
<6.5 |
TBD |
| TIR |
<1.3 |
<3.0 |
<4.0 |
TBD |
| FPD |
<1.0 |
<2.5 |
<3.0 |
TBD |
| |
Backside |
|
CVD |
CVD |
CVD |
TBD |
| |
Bow |
|
35 |
35 |
20 |
TBD |
| |
Warp |
|
50 |
40 |
55 |
TBD |
| |
Site Flatness (20X20) max site |
SBIR |
< 1.5 |
|
<.70 |
TBD |
| SBID |
** |
|
<.5 |
TBD |
| SFLR |
** |
** |
** |
TBD |
| SFLD |
** |
** |
** |
TBD |
| SFQR |
|
** |
<.40 |
TBD |
| SFQD |
|
<.40 |
<.30 |
TBD |
| |
LPD USL |
< 0.12 |
|
|
|
|
| <0.13 |
|
82 |
70 |
TBD |
| <0.16 |
|
16 |
35 |
TBD |
| <0.20 |
|
10 |
28 |
TBD |
| <0.30 |
|
5 |
13 |
TBD |
| |
Epi Thickness |
|
|
|
|
|
| |
Epi Res |
|
|
|
|
|
| |
Epi Stacking Faults |
|
|
|
|
|
| |
Laser Mark |
|
** |
** |
** |
** |
** Specifications subject to availability
|
|
